Intel and Micron offer high-speed NAND

Feb 4th, 2008

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A new, high-speed NAND flash-memory technology, released today by Intel and Micron Technology, could propel the use of solid-state storage in video cameras, PCs and other devices.

The technology enables data transfer as much as five times faster than conventional NAND. It was developed jointly by the companies, and is being manufactured by their joint venture, IM Flash Technologies. The announced speeds are up to 200 megabytes per second for reading data, and 100 megabytes per second for writing.

Regular NAND offers speeds of up to 40 megabytes per second for reading and up to 20 megabytes for writing. Micron said the new speeds are “the fastest read and write throughputs ever for a NAND flash device.”

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